| PART |
Description |
Maker |
| MB84VD23481FJ-70PBS |
64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAM
|
SPANSION
|
| MB82DDS08314A-75L |
256 Mbit Mobile FCRAM 1.8 V, DDR Burst Mode
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| MB82DBS02163E-70L |
32 Mbit Mobile FCRAM 1.8 V, Burst Mode & Page Mode
|
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory
90ns 2M-bit CMOS flash memory
70ns 2M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| IDT72V265LA15PF IDT72V265LA15PFI 72V255LA15PF 72V2 |
MICROCIRCUIT, MEMORY, CMOS (STQFP) REV -
IC MEMORY FIFO SYNCHRONOUS 3.3V 8K X 18 OTHER FIFO, 10 ns, PQFP64
3.3 VOLT CMOS SuperSync FIFO 8,192 x 18 16,384 x 18
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
Integrated Device Technolog...
|
| MB82DS01181E-70LWT-A |
Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
| HY5S5B6GLF-6 HY5S5B6GLF-6E HY5S5B6GLF-H HY5S5B6GLF |
256Mbit (16Mx16bit) Mobile SDR Memory
|
Hynix Semiconductor
|
